consisting of four major parts as
[A] Fundamentals
Introduction to Wide Gap Semiconductors; physics and properties of GaN & related materials; GaN-based Quantum Wells (QWs), Quantum Dots (QDs) and superlattices (SLs); Structures of GaN-based light emitting diode (LED) and laser diode (LD); Basics of compound semiconductor epitaxy growth; Elements of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); Epitaxial GaN-based materials and structures; Key characterization techniques;
[B] Structures, properties and MOCVD growth of III-Nitrides
MOCVD systems; Substrates; MO precursors and source materials; Preparation prior to epitaxy; Buffer growth and Physics; Un-doped GaN; Si-doped n-type GaN; Mg-doped p-type GaN; InGaN and phase separation; AlGaN and AlN; InGaN-GaN multiple quantum well (MQW); InGaN-based LED; InGaN-based LD; AlGaN-GaN SL; AlGaN-based UV detectors; Deep UV light emitters;
[C] Advanced Studies
Penetrating optical, electrical and structural analysis; Optoelectronic device design; Development of blue LEDs and LDs. Wavelengths tuning by controlling the composition. GaN-based LED & LD with various wavelengths, ranging in red-yellow-green-blue-violet, in one substrate material. Mass production and fast characterization of GaN materials and structures;
[D] Applications of wide gap semiconductors
Display technology; Solid state lighting; Optical Communication; Optics; Photonics; Automobiles; Power electronics; Solar cells; Aero- and space-technology.